HfO ₂ ?Based Ferroelectrics Applications in Nanoelectronics

This article is dedicated to HfO2-based ferroelectrics applications in nanoelectronics, especially topics not well developed up now, such as microwaves, energy harvesting, and neuromorphic devices working artificial neurons synapses. Other well-covered the literature, memories or negative-capacitance ferroelectric field-effect transistors, will be only briefly mentioned. The main impact of possibility using them for fabricating at wafer-level complementary metal oxide semiconductor (CMOS) compatible high-frequency devices, phase-shifters, antenna arrays, filters with a high degree tunability miniaturization, harvesting key components. In addition, recent transfer 2D materials on HfO2 has demonstrated new physical effects, opening 0.2 eV bandgap graphene monolayers, allows manufacture very high-mobility transistors (FETs) based graphene/HfZrO.